Process stability of ferroelectric PLZT thin film sputtering for FRAM (R) production

Authors
Suu, K Tani, N Chu, F Hickert, G Hadnagy, TD Davenport, T
Citation
K. Suu et al., Process stability of ferroelectric PLZT thin film sputtering for FRAM (R) production, INTEGR FERR, 26(1-4), 1999, pp. 711-721
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
26
Issue
1-4
Year of publication
1999
Pages
711 - 721
Database
ISI
SICI code
1058-4587(1999)26:1-4<711:PSOFPT>2.0.ZU;2-F
Abstract
(PbLa)(Zr,Ti)O-3 (PLZT) thin films were fabricated by RF magnetron sputteri ng. Aiming at process development for FRAM(R) production, PLZT films were d eposited on 6-inch substrates using a 12-inch ceramic target. High depositi on rate was realized at relatively low sputtering power by utilizing a high -density PLZT target Precise compositional control was achieved by controll ing sputtering condition. A non-stop 1000-wafer deposition was performed sh owing high process stability in terms of both deposition rate and ferroelec tric properties.