SBTN thin film capacitors prepared by RF-magnetron sputtering

Thin films of Bi based layered-structure solid solution, SrBi2Ta2O9-SrBi2Nb 2O9 (SBTN), were prepared by conventional single target RF-magnetron sputte ring on Pt/Ti/SiO2/Si substrates with a diameter of 6 inches. The capacitor s were fabricated by patterning the top Pt electrode using photolithography . SBTN thin films with random and c-axis preferred orientation were obtaine d using RTP annealing and conventional furnace annealing, respectively. The electrical properties were characterized by both the hysteresis and pulsed field methods. A 2Pr of 24 mu C/cm(2) and E-c of 125kV/cm were measured fr om randomly oriented 1600 Angstrom films. The films exhibit excellent fatig ue performance.