Ferroelectric properties of PLZT thin films prepared using ULVAC ZX-1000 sputtering system

Thin films of Ca and Sr doped PLZT(3/40/60) were RF sputtered on 6-inch sub strates using ULVAC CERAUS ZX-1000 magnetron sputtering system. The 2000 An gstrom PLZT films showed good thickness uniformity across the wafer (less t han +/- 1.5%). The crystallized PLZT films are highly {111} textured. The 3 V Q(sw) is above 30 mu C/cm(2) and V-90% is below 3.5V. After 10(9) fatigue cycles, 3V Q(sw) is still 29 mu C/cm(2). The films also showed good retent ion properties. 3V Q(ss)(10year) = 12 mu C/cm(2), 3V Q(OS)(10year) = 9 mu C /cm(2). The same process was utilized to run 1000 wafers on ZX-1000. The st able ferroelectric performance achieved during 100 kWh sputtering indicates good repeatability of the ZX-1000 mass production tool.