Review of SrBi2Ta2O9 thin films capacitor processing

Ferroelectric memories (FeRAMs) are new types of memories especially suitab le for mobile applications due to their unique properties like non-volatili ty, small DRAM-like cell size, fast read and write as well as low voltage/l ow power behavior. Although standard CMOS processes can be used for fronten d and backend processes, FeRAM technology development has to overcome major challenges due to new materials used for capacitor formation. This work gi ves an overview of SrBi2Ta2O9 (SBT) thin films capacitor processing using P t as electrode material. The study describes in derail SBT formation using metal organic deposition (MOD) as well as influence of electrode thickness and capacitor patterning on SBT electrical properties. Also, results for in tegration of the capacitor process into a 0.5 mu m CMOS process with 2-laye r tungsten/aluminum metallization as well as stacked capacitor results are given.