Several recent reports have combined Ir electrodes with PbZrxTi1-xO3 (PZT)
made by chemical solution deposition (CSD) to produce capacitors with low f
atigue rates, but the same behavior has not been reported for sputtered PZT
with Ir electrodes. This paper presents a comparison of the performance of
sputtered and CSD PZT capacitors with Ir electrodes. It was found that rep
lacing the Pt top electrode with Ir was sufficient for obtaining improved f
atigue performance for both sputtered and CSD deposited PZT. A comparison o
f Ir and Pt top electrodes shows that Ir can extend the number of useful sw
itching cycles by 3 to 4 orders of magnitude for both sputtered and CSD dep
osited PZT. As has been previously observed for Pt electrodes, the fatigue
with Ir top electrodes is dependent on the switching voltage. Excellent fat
igue performance has been observed to 10(11) cycles for both 3 and 5 V swit
ching potentials. In addition to fatigue performance, a detailed analysis o
f switching, retention and leakage current behavior will also be presented.