Comparison of CSD and sputtered PZT with iridium electrodes

Citation
Gr. Fox et al., Comparison of CSD and sputtered PZT with iridium electrodes, INTEGR FERR, 26(1-4), 1999, pp. 917-925
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
26
Issue
1-4
Year of publication
1999
Pages
917 - 925
Database
ISI
SICI code
1058-4587(1999)26:1-4<917:COCASP>2.0.ZU;2-V
Abstract
Several recent reports have combined Ir electrodes with PbZrxTi1-xO3 (PZT) made by chemical solution deposition (CSD) to produce capacitors with low f atigue rates, but the same behavior has not been reported for sputtered PZT with Ir electrodes. This paper presents a comparison of the performance of sputtered and CSD PZT capacitors with Ir electrodes. It was found that rep lacing the Pt top electrode with Ir was sufficient for obtaining improved f atigue performance for both sputtered and CSD deposited PZT. A comparison o f Ir and Pt top electrodes shows that Ir can extend the number of useful sw itching cycles by 3 to 4 orders of magnitude for both sputtered and CSD dep osited PZT. As has been previously observed for Pt electrodes, the fatigue with Ir top electrodes is dependent on the switching voltage. Excellent fat igue performance has been observed to 10(11) cycles for both 3 and 5 V swit ching potentials. In addition to fatigue performance, a detailed analysis o f switching, retention and leakage current behavior will also be presented.