Microstructure evolution and leakage phenomena of CSD PLZT thin films

(Pb,La)(Zr,Ti)O-3 [PLZT] thin films were deposited by chemical solution dep osition (CSD) on sputtered Pt/IrO2 electrodes on SiO2/Si wafers. A relation ship between PLZT grain size and leakage was observed with films of 150 nm thick. Large grained films showed high leak age, whereas fine-grained films showed low leakage. Limited nucleation sites led to pyrochlore at grain bo undaries, which may act as an electrical pathway. Thin CSD PLZT film with l ower leakage was prepared by shortening the total pyrolysis time. From thes e results, pyrolysis time was an important parameter used to control film m icrostructure and leakage.