Reversible and irreversible domainwall contributions to the polarization in CSD prepared Ba1-xPbx(Ti,Mn)O-3 thin films

Ba1-xPbxTiO3 (BPT) as a thin film system has been developed to investigate the ferroelectric properties respectively the different ferroelectric polar ization contributions. BPT has been synthesized using CSD based on metal pr opionates. The films were deposited on platinum coated silicon wafers and a nnealed at 750 degrees C. The BPT thin films were characterized with X-ray diffraction and SEM. Hysteresis, C-V measurements and leakage current measurements were used to investigate the electrical properties of the films. Special attention has b een given to the frequency dependence of the hysteresis loop- and C-V-measu rements to distinguish the reversible and irreversible parts of the total f erroelectric polarization. Static hysteresis curve measurements [1] were us ed to characterize the particular polarization contributions of the ferroel ectric thin films independent of the measuring frequency.