Mn and Sb doped-PZT thin films for uncooled infrared detector array

Mn and Sb doped-PZT (PMSZT) pyroelectric thin films have been fabricated on Si substrates for uncooled infrared detectors and thermal imaging heads. T he electric properties of PMSZT thin films have been investigated. A pyroel ectric coefficient p of 45 nC/cm(2)K, dielectric constant epsilon(r) of 100 , and dielectric loss tan delta of 0.01 at 25 degrees C for the PMSZT thin films have:been achieved. The PMSZT detectors exhibited high figures of mer it F-v of 1768 cm(2)/C, and F-d of 0.018 cm(3)/J(1/2) at 25 degrees C. An I R detector array with the PMSZT thin film deposited on a YBCO microbridge s tructure for thermal isolation has been fabricated using micromachining tec hniques. The PMSZT detector with an air gap between the bottom electrode an d Si substrates shows a larger voltage response than that of PMSZT detector without an air gap. At a 30 Hz frame frequency, a 3 times larger voltage r esponse of a PMSZT detector with air gap, compared to that without an air g ap, has been achieved. The PMSZT detectors with the relatively flat detecti vity D*, ranging from 2.5x10(8) to 6.0x10(8) cmHz(1/2)/W in the 2.5-19.5 mu m wavelength band indicate a potential for broad band IR detectors.