Low temperature synthesis of ferroelectric Sr2Nb2O7 thin films by rapid thermal annealing

Ferroelectric Sr2Nb2O7 thin films were successfully prepared on Pt/TiO2/SiO 2/Si(100) substrates at temperatures as low as 650 degrees C using a sol-ge l method with rapid thermal annealing (RTA). It was found that improvements in film crystallinity and microstructural evolution could be realized by u sing a RTA process after each coating step. The Sr2Nb2O7 films annealed abo ve 650 degrees C exhibited an 0k0 preferred orientation. The dielectric con stant, loss value and remanent polarization of thin films annealed at 700 d egrees C were 48, 0.01 and 0.5 mu C/cm(2), respectively.