Citation
Y. Park et al., Effect of annealing atmosphere on the delamination of Pt layer in SiO2/Pt/PZT/Pt ferroelectric capacitor, INTEGR FERR, 25(1-4), 1999, pp. 671-680
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587
→ ACNP
Volume
25
Issue
1-4
Year of publication
1999
Pages
671 - 680
Database
ISI
SICI code
1058-4587(1999)25:1-4<671:EOAAOT>2.0.ZU;2-F
Abstract
Blister formation has been studied for SiO2/Pt/PZT/Pt capacitors. Plasma-en
hanced chemical vapor deposited (PECVD) and sputtered SiO2 was used to comp
are the characteristic morphology with different oxide layer. With increasi
ng the annealing temperature, the blisters are observed at the temperature
of 325 degrees C in O-2 atmosphere, while no blisters are formed even at 50
0 degrees C in N-2 and Ar atmosphere. Hydrogen evolution analysis from PECV
D SiO2 layer shows a sharp peak near 320 degrees C. From these results, we
could suggest that the high gaseous pressure developed by chemical reaction
between oxygen and hydrogen cause the blister formation in PECVD SiO2/Pt/P
ZT/Pt capacitors.