Graded PZT thin film capacitors with stoichimetric variation by MOD technique

Authors
Chen, Z Arita, K Lim, M De Araujo, CAP
Citation
Z. Chen et al., Graded PZT thin film capacitors with stoichimetric variation by MOD technique, INTEGR FERR, 24(1-4), 1999, pp. 181-188
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
24
Issue
1-4
Year of publication
1999
Pages
181 - 188
Database
ISI
SICI code
1058-4587(1999)24:1-4<181:GPTFCW>2.0.ZU;2-J
Abstract
By tailoring Zr/Ti ratio in Pb(Zr,Ti)O-3 from 45/55 to 75/25, functionally graded PZT thin films were prepared by metal organic decomposition (MOD) te chnique. P-E hysteresis loops were measured, and polarization was found to shift up or down depending on the direction of the composition gradients of the PZT. This polarization offset was modeled using Poisson's equation in one dimension. Switching charge was also found to be compositional gradient direction dependent.