Asymetric C-V characteristics of graded PZT thin film capacitors

Authors
Chen, Z Arita, K Lim, M De Araujo, CAP
Citation
Z. Chen et al., Asymetric C-V characteristics of graded PZT thin film capacitors, INTEGR FERR, 24(1-4), 1999, pp. 189-194
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
24
Issue
1-4
Year of publication
1999
Pages
189 - 194
Database
ISI
SICI code
1058-4587(1999)24:1-4<189:ACCOGP>2.0.ZU;2-Q
Abstract
Functionally graded PZT thin films were deposited via MOD technique by vary ing Zr/Ti ratio in Pb(Zr,Ti)O-3. Large signal C-V and small signal C-V were measured by using Symetrix Tester. They are found to be asymmetric compare d to that of non-graded PZT capacitors and were gradient direction dependen t. It's proposed that the built in potential due to graded polarization is the cause of the asymmetry.