Optimazation of thermal annealing process of lead lanthanum titanate ferroelectric thin films

Citation
Xq. Wu et al., Optimazation of thermal annealing process of lead lanthanum titanate ferroelectric thin films, INTEGR FERR, 23(1-4), 1999, pp. 15-23
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
23
Issue
1-4
Year of publication
1999
Pages
15 - 23
Database
ISI
SICI code
1058-4587(1999)23:1-4<15:OOTAPO>2.0.ZU;2-Q
Abstract
Rapid thermal annealing (RTA), conventional furnace annealing (CFA) and com bined RTA and CFA annealing (RCA) were adopted for thermal treatment of lea d lanthanum titanate (PLT) thin films. Through comparison of morphologies, dielectric and ferroelectric properties, current-voltage (I-V) and capacita nce-voltage (C-V) characteristics as well as pyroelectric currents, the fea tures of each thermal annealing process were discussed. Optimized thermal a nnealing process was proposed. PLT thin films prepared by RCA process have higher remanent polarization, flat I-V curve, sharper nonlinearity peaks of C - V curve and larger pyroelectric current density.