Rapid thermal annealing (RTA), conventional furnace annealing (CFA) and com
bined RTA and CFA annealing (RCA) were adopted for thermal treatment of lea
d lanthanum titanate (PLT) thin films. Through comparison of morphologies,
dielectric and ferroelectric properties, current-voltage (I-V) and capacita
nce-voltage (C-V) characteristics as well as pyroelectric currents, the fea
tures of each thermal annealing process were discussed. Optimized thermal a
nnealing process was proposed. PLT thin films prepared by RCA process have
higher remanent polarization, flat I-V curve, sharper nonlinearity peaks of
C - V curve and larger pyroelectric current density.