Full chemical fabrication of SrBi2(Ta,Nb)(2)O-9 ferroelectric thin film capacitors

SrBi2(Ta,Nb)(2)O-9 ferroelectric thin film capacitors with RuO2 electrodes were prepared for the first time by a full chemical route. Stable sols of S rBi2(Ta,Nb)(2)O-9 precursors were obtained from mixtures of niobium (tantal um) ethoxide, bismuth and strontium 2-ethylhexanoates, Ruthenium dioxide pr ecursors was prepared by dissolving an aqueous solution of ruthenium nitros ylnitrate into 2-methoxyethanol. Capacitors were fabricated by sequential s pin coating the precursors on silicon wafers according to the sequence Si/R uO2/SrBi2(Ta,Nb)(2)O-9/RuO2. Fully crystallized crack-free materials were o btained by annealing at 700 degrees C for 2 h. Hysteresis loops (3 - 10 V) are similar to those observed using platinum electrodes.