A review of electronic structural data is given and an interface Schottky m
odel has been developed. X-ray photoemission spectroscopy (XPS) and seconda
ry electron emission data have been used to determine the electron affinity
of SBT and the band match-up for the SBT/Pt junction. The results of X-ray
absorption spectroscopy studies and XPS valence band measurements indicate
d the electronic states above and below the bandgap of SBT. These experimen
tal data have been compared with the results of tight-binding calculations.
Angle dependent XPS measurements indicated that metallic bismuth is diffus
ing to the surface of SBT which would have significant influence on the ele
ctrical properties of the SBT/Pt junction. The hydrogen distribution in SBT
, also an important issue for the device properties, has been probed using
elastic recoil detection.