Z. Surowiak et al., Influence of conditions of r.f. sputtering on chemical constitution and structure of PZT-type thin films, INTEGR FERR, 23(1-4), 1999, pp. 229-257
By means of r.f. sputtering the polycrystalline Pb(Zr0.53Ti0.45W0.01Cd0.01)
O-3 ferroelectric thin films of d(f) = (0.5 - 10) mu m in thickness have be
en obtained. A disk ceramics obtained by hot pressing method or a layer of
powdered ceramic samples was used as a target. On the basis of structure an
alysis by X-ray diffraction conditions which are necessary for obtaining th
in ferroelectric, stoichiometric films having a perovskite-type structure h
ave been determined. Regions of amorphous film deposition, pyrochlore-type
structure or mixture of pyrochlore-type and perovskite-type structure are a
lso presented in diagram "working gas pressure versus substrate temperature
" (p(O2) - T-s). New experimental data on pyrochlore-type structure metasta
bility and its conversion into perovskite-type structure caused by thermal
treatment are obtained.