Structural properties of epitaxial YSZ and doped CeO2 films on different substrates prepared by liquid sources MOCVD (LSMOCVD)

With LSMOCVD it is possible to deposit reproducibly oxide films without nee d for high vacuum systems. On in-plane aligned oxide and metallic substrates epitaxial film growth tak es place. Film morphology, interface layers and surface roughness can be co ntrolled by choice of deposition parameters like temperature, gas phase com position and mass flow. The layers were characterized by SEM, AFM and textu re analysis. Yttria-stabilized zirconia (YSZ), ceria and ceria doped with Gadolinium are prepared and the dependence of film properties on deposition parameters is investigated. The suitability of these films for the use of buffer layers in YBCO-deposition is discussed.