Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires

Authors
Catalano, M Taurino, A Lomascolo, M Vasanelli, L De Giorgi, M Passaseo, A Rinaldi, R Cingolani, R Mauritz, O Goldoni, G Rossi, F Molinari, E Crozier, P
Citation
M. Catalano et al., Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires, J APPL PHYS, 87(5), 2000, pp. 2261-2264
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
5
Year of publication
2000
Pages
2261 - 2264
Database
ISI
SICI code
0021-8979(20000301)87:5<2261:NCFIMI>2.0.ZU;2-Z
Abstract
An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%-3% excess indium) , spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra. (C) 2000 American Institute of Physics. [S0021-8979(00)07905-6].