Sa. Studenikin et al., Carrier mobility and density contributions to photoconductivity transientsin polycrystalline ZnO films, J APPL PHYS, 87(5), 2000, pp. 2413-2421
Slow photoconductivity transients were comprehensively studied in ZnO films
prepared by spray pyrolysis of the zinc-nitrate solution. Surface charge c
ontrolled the film conductivity, and it was possible to reversibly change t
he conductivity by many orders of magnitude using short-term annealing in h
ydrogen and oxygen. Under illumination, the conductivity of as-grown films
may increase by several orders of magnitude, depending on the dark conducti
vity. Photoconductivity was due to the capture of nonequilibrium holes at s
urface oxygen states to produce an equivalent number of excess electrons in
the conduction band. Reverse process of the photoconductivity relaxation i
s determined by an electron tunneling mechanism to the surface oxygen state
s. (C) 2000 American Institute of Physics. [S0021-8979(00)05404-9].