Ballistic electron emission microscopy of Au/n-ZnSe contacts and local density of states spectroscopy

Authors
Chahboun, A Coratger, R Ajustron, F Beauvillain, J Dharmadasa, IM Samantilleke, AP
Citation
A. Chahboun et al., Ballistic electron emission microscopy of Au/n-ZnSe contacts and local density of states spectroscopy, J APPL PHYS, 87(5), 2000, pp. 2422-2426
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
5
Year of publication
2000
Pages
2422 - 2426
Database
ISI
SICI code
0021-8979(20000301)87:5<2422:BEEMOA>2.0.ZU;2-O
Abstract
Ballistic electron emission microscopy (BEEM) has been used to investigate the Au/n-ZnSe contact at high voltage. A statistical barrier height value o f 1.63 +/- 0.05 eV is obtained. The metal-insulator-semiconductor structure is invoked to explain domains of low electron transmission. Features appea r in BEEM spectra at higher voltages and can be attributed to the density o f empty states in the semiconductor. Impact ionization effects are observed when the electron kinetic energy exceeds the band-gap energy. (C) 2000 Ame rican Institute of Physics. [S0021-8979(00)02104-6].