Interference effects in anisotropic optoelectronic devices

Citation
Wmv. Wan et al., Interference effects in anisotropic optoelectronic devices, J APPL PHYS, 87(5), 2000, pp. 2542-2547
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
5
Year of publication
2000
Pages
2542 - 2547
Database
ISI
SICI code
0021-8979(20000301)87:5<2542:IEIAOD>2.0.ZU;2-X
Abstract
In this article, we develop a model which calculates the effects of optical interference in polymer devices. In this model, we include the effects of optical birefringence in the layers making up the devices, as well as the v ariation of quantum efficiency across the active layer. We also extend the plane wave emission modification to relate to the emission power measured o utside the device. Experimental measurements of photoluminescence emission from poly(p-phenylene vinylene) (PPV) devices were obtained. Comparison bet ween the experimental and calculated angular distribution of emission is ma de, and good agreement is found. This illustrates that the model is suffici ent and that optical birefringence must be taken into account. Electrolumin escence emission from poly(p-phenylene vinylene) PPV devices was also measu red. By comparing with the calculated spectra from our model, we demonstrat e that the model can be used as a tool to locate the position of the recomb ination zones in electroluminescent devices. (C) 2000 American Institute of Physics. [S0021-8979(00)04805-2].