Recrystallization and electrical properties of MeV P implanted 6H-SiC

We have investigated structural changes and electrical activation processes in 8 MeV P+ ion implanted 6H-SiC at room temperature (RT) and 850 degrees C by means of transmission electron microscopy, secondary ion mass spectrom etry, and current-voltage measurements. A buried amorphous layer was produc ed in the RT implanted sample, while no amorphization occurred and extended defects were formed in the 850 degrees C implanted sample. The amorphous l ayer was recrystallized after 1000 degrees C annealing, but electrical acti vation of implanted P was very weak. It was found that activation occurred at an annealing temperature of 1300 degrees C, which is lower than the typi cal annealing temperature, 1500 degrees C for similar to 100 KeV P+ implant ation samples. The resistivity of the RT implanted sample was approximately a half of that in the 850 degrees C implanted sample probably due to the e xtended defects, which were stable even after 1300 degrees C annealing. (C) 2000 American Institute of Physics. [S0021-8979(00)08405-X].