Diffusion of low-dose implanted aluminum in silicon in inert and dry O-2 ambient

Redistribution of a high-energy (3 MeV) low-dose (5 x 10(13) cm(-2)) implan ted aluminum profile in silicon under inert and dry O-2 is investigated in the temperature range (900-1100 degrees C). The chemical profiles were meas ured by secondary ion mass spectroscopy and the effective diffusivities wer e extracted from the experimental data from fitting with calculated profile s obtained by numerical resolution of Fick's law. It is found that the alum inum diffusion is significantly enhanced during thermal oxidation. The diff usivity enhancement decreases with the temperature. Comparison with boron d ata suggests that the mechanism of aluminum diffusion in silicon is similar to that of boron. (C) 2000 American Institute of Physics. [S0021-8979(00)0 6505-1].