A model is developed to describe the kinetics of the three scattering chann
els-unreactive scattering and dissociative chemisorption via single atom ab
straction and two atom adsorption-that are present in the interaction of F-
2 with Si(100). The model provides a good description of the non-Langmuiria
n coverage dependence of the probabilities of single atom abstraction and t
wo atom adsorption, yielding insight into the dynamics of the gas-surface i
nteraction. The statistical model is based on the premise that the two diss
ociative chemisorption channels share a common initial step, F atom abstrac
tion. The subsequent interaction, if any, of the complementary F atom with
the surface determines if the overall result is single atom abstraction or
two atom adsorption. The results are consistent with the orientation of the
incident F-2 molecular axis with respect to the surface affecting the prob
ability of single atom abstraction relative to two atom adsorption. A perpe
ndicular approach favors single atom abstraction because the complementary
F atom cannot interact with the surface, whereas a parallel approach allows
the F atom to interact with the surface and adsorb. The fate of the comple
mentary F atom is dependent on the occupancy of the site with which it inte
racts. The model distinguishes between four types of dangling bond sites on
the Si(100)(2x1) surface, based on the occupancy of the site itself and th
at of the complementary Si atom in the Si surface dimer. The results show t
hat the unoccupied dangling bond sites on half-filled dimers are about twic
e as reactive as those on empty dimers, which is consistent with an enhance
d reactivity due to a loss of a stabilizing pi interaction between the two
unoccupied dangling bonds on a dimer. (C) 2000 American Institute of Physic
s. [S0021-9606(00)70811-7].