Steady and transient optical properties of cubic InGaN epilayers

Authors
Xu, ZY Liu, BL Li, SF Yang, H Ge, WK
Citation
Zy. Xu et al., Steady and transient optical properties of cubic InGaN epilayers, J INF M W, 19(1), 2000, pp. 11-14
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
10019014 → ACNP
Volume
19
Issue
1
Year of publication
2000
Pages
11 - 14
Database
ISI
SICI code
1001-9014(200002)19:1<11:SATOPO>2.0.ZU;2-Y
Abstract
Photoluminescence (PL) and time-resolved PI, were employed to study the ste ady and transient optical properties of cubic InxGa1-xN epilayers grown by MBE. The results suggest that the PL transitions in InGaN epilayers are mai nly from localized exciton states. The localization energies are estimated to be 60 meV, independent of In composition. The PL decay is characterized by a hi-exponential dependence. The fast process (50 ps at 12K) is related to the fast relaxation of excitons, while a slower contribution (200-270 ps at 12K) is attributed to the decay process of localized excitons.