The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy

Authors
Chen, YB Jiang, DS Wang, RZ Zheng, HJ Sun, BQ
Citation
Yb. Chen et al., The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy, J INF M W, 19(1), 2000, pp. 15-18
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
10019014 → ACNP
Volume
19
Issue
1
Year of publication
2000
Pages
15 - 18
Database
ISI
SICI code
1001-9014(200002)19:1<15:TIOSGB>2.0.ZU;2-9
Abstract
The surface photovoltage (SPV) effect induced by the defect states in semi- insulating (SI) GaAs was studied. The PV response below the band edge was m easured at room temperature with a de optical biasing. The spectra were fou nd to be strongly dependent on the surface recombination and were attribute d to formation of the carrier concentration gradient near the surface regio n, showing that SPV is a very sensitive and nondestructive technique for ch aracterizing the surface quality of the SI-GaAs wafers.