Growth mechanism of YBa2Cu3O7-delta thin films and precipitates on planar and vicinal SrTiO3 substrates

Citation
J. Kim et al., Growth mechanism of YBa2Cu3O7-delta thin films and precipitates on planar and vicinal SrTiO3 substrates, J MATER RES, 15(3), 2000, pp. 596-613
Citations number
61
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
15
Issue
3
Year of publication
2000
Pages
596 - 613
Database
ISI
SICI code
0884-2914(200003)15:3<596:GMOYTF>2.0.ZU;2-R
Abstract
Effects of the vicinal angle, film thickness, and temperature on the growth modes, microstructures, and electrical properties of YBa2Cu3O7-delta on Sr TiO3 were studied. Island growth transition between the initial nucleation and the later coalescence stages was observed with film thickness on a plan ar SrTiO3, while no islands were observed at the later stage due to the ste p-flow mode. As the growth temperature increased, a-axis precipitates were transformed to c-axis precipitates (islands), while no islands formed on vi cinal SrTiO3. The supercurrent critical temperature was strongly related to the substrate vicinal angle due to the step-flow mode.