In contrast to the green and familiar orange-red emissions associated with
UV excited porous silicon (PS), the origins of the longer wavelength photol
uminescence (PL) excited in the visible and near-infrared regions on a PS s
urface at 298 degrees K are considered within an alternate molecular model.
Ab initio molecular orbital theory is used to suggest that the longest wav
elength PL observed as a result of the nitrogen laser pumping of post-etch
dye and HCl treated PS samples and that accessed with near-infrared excitat
ion sources (PLE) at 298 K arises in large part from singlet-triplet transi
tions in silylene-based moieties (:SIRY) attached to the PS surface or pres
ent as uncoupled defect sites at or near the surface. This long-wavelength
PL is distinct from the ultraviolet light excited PL associated with IFS wh
ich has previously been attributed to a silanone-based silicon oxyhydride m
oiety attached to the surface. Ab initio molecular theory at the MP2 level
with polarized double-basis sets (MP2/DZP) has been used to calculate the s
inglet-triplet separation for a number of silylenes with a variety of combi
nations of R, Y = H, OH, SiH3, OSiH3, Cl, and NH2 and to evaluate their the
rmodynamic stability relative to the silanones. The calculations show that
the singlet silylene is always more stable than its triplet with transition
wavelengths ranging from 1100 to 420 nm, where the highest transition ener
gies are found to correlate with the most electronegative substituents. The
silylene isomers are found to be more stable than the corresponding silano
nes in most cases. The relative stabilities are strongly coupled to the ele
ctronegativity of the substituents and to the formation of an Si-O bond in
the silylene as compared to the much weaker Si-Si bond in the silanone.