Ce2Ni2Cd was synthesized by reacting the elements in a sealed tantalum tube
using a high-frequency furnace with a water-cooled sample chamber, The str
ucture was refined from single-crystal X-ray data: ordered U3Si2 type, P4/m
bm, a = 755.67(8) pm, c = 375.14(6) pm, wR2 = 0.0408, 232 F-2 values, and 1
3 parameters. A refinement of the occupancy parameters showed defects on th
e nickel site, resulting in a composition of Ce2Ni1.88(1)Cd for the crystal
investigated, The structure may be described as an intergrowth of CsCl and
AlB2 related slabs of compositions CeCd and CeNi2. Magnetic susceptibility
measurements indicate intermediate-valent behavior of the cerium atoms. Th
e susceptibility data can be fit to a modified Curie-Weiss expression with
Theta(p)=-5.2(2)K, mu(exp) = 0.79(3) mu(B)/Ce, and a temperature-independen
t contribution chi(0) = 67.5(7) x 10(-9) m(3)/ mel. Temperature-dependent r
esistivity measurements indicate metallic behavior with a specific resistiv
ity of 140 +/- 20 mu Omega cm at room temperature, Below 50 K the specific
resistivity reveals a T-2 dependence with rho(0) = 84.4(1) mu Omega cm and
A = 0.0056(1) (mu Omega cm)/K-2, (C) 2000 Academic Press.