Electron injection dynamics through the Schottky barrier

Ultrafast dynamics of semiconductor microcavity modes in ZnSe/Cr structures was studied by femtosecond pump-supercontinuum probe spectroscopy in wide spectral region 1.6-3.2 eV for different pumping photon energies (h) over b ar omega(pu1) = 2.34 eV, (h) over bar omega(pu2) = 2.75 eV, and (h) over ba r omega(pu3) = 5.5 eV. The ultrafast process similar to 40 fs connected wit h the excitation of nonequilibrium electrons of metal (i.e., boundary of th e microcavity), which penetrate through the Schottky electron barrier into the semiconductor, was observed. possible applications of these microcaviti es as femtosecond broadband optical switch and as device for effective up-c onversion are discussed.