Changes in reflectivity of various solid materials upon irradiation with hi
gh power (10(12) W/cm(2)) ultrashort (500 fs) KrF excimer laser pulses are
reported. The excimer pulse is focused by a cylindrical lens onto a line at
the sample surface while a tilted wavefront (45 degrees) probe pulse (lamb
da = 496 nm, 500 fs pulse length) is scanning over the ablated area. Thus t
he spatial distribution of the reflected probe pulse corresponding to the t
emporal reflectivity transient, was recorded. For polymeric and semiconduct
or samples the reflectivity increases with a factor of 1.5-5 compared to th
e original value when the excimer laser pulse impinges onto the surface. It
is shown that increasing the absorption of PMMA samples with naphthalene d
oping leads to an increase in maximum reflectivity. In case of glass reflec
tivity decrease is observed. The reflectivity increase or decrease is inter
preted as a competing process of formation of high density free electron ga
s due to fast ionization processes, which leads to higher reflectance, and
expansion of the ablation plume which leads to reflectivity decrease due to
light scattering processes.