Far-infrared harmonic generation in semiconductors: A Monte Carlo simulation

Authors
Adorno, DP Zarcone, M Ferrante, G
Citation
Dp. Adorno et al., Far-infrared harmonic generation in semiconductors: A Monte Carlo simulation, LASER PHYS, 10(1), 2000, pp. 310-315
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
LASER PHYSICS
ISSN journal
1054660X → ACNP
Volume
10
Issue
1
Year of publication
2000
Pages
310 - 315
Database
ISI
SICI code
1054-660X(200001/02)10:1<310:FHGISA>2.0.ZU;2-2
Abstract
The efficiency of harmonics generation in a GaAs bulk semiconductor driven by an external radiation field with frequency in the far-infrared domain is calculated using Monte Carlo simulation for the motion of the electrons in the conducting band and nonlinear electrodynamic equations. For a field wi th amplitude of E = 50 kV/cm we resolve the harmonics up to the 15th order with an efficiency of 10(-7). An analysis of the different mechanisms givin g rise to harmonics generation is also presented.