An improved test device, based on the light emitting device (LED) presented
in the following article (L. Pavesi, R. Guardini, P. Bellutti, Thin Solid
Films 297 (1997) 272) is reported. The whole processing of the diode is CMO
S compatible and the porous Si (PS) formation is at the end of the run. The
idea of the LED is to exploit the doping selectivity of the silicon anodiz
ation by forming n(+)-type doped crystalline Si stripes floating over the p
orous silicon layer. Electrical injection is through the n(+) stripes into
the PS, i.e. through a Si/PS heterojunction. Here, the electrical and optic
al properties of the electrochemically oxidized LED are characterized. Anod
ic oxidation improves the LED performance both in terms of stability (more
than 8 days under CW excitation) and efficiency (a factor 3 or higher with
respect to the as-grown LED). (C) 2000 Elsevier Science S.A. All rights res
erved.