Luminescence and structural properties of porous silicon with ZnSe intimate contact

The incorporation of ZnSe into luminescent porous silicon layers (PSL) by e lectrochemical co-deposition of Zn and Se is described by focusing on the c ritical parameters related to the specific nature of porous silicon. The PS L photoluminescence is monitored during the growth of ZnSe to reveal the ef fects of the process on the optical properties of the structure, allowing a n in-situ characterization of the growth. The structure and chemical compos ition of the resulting nanostructures are investigated by transmission elec tron microscopy (TEM) and chemical microanalysis which show homogeneous inc orporation of ZnSe inside the porous matrix with no segregation. Crystalliz ation of ZnSe by subsequent thermal annealing is also studied and prelimina ry characterizations of the electrical properties of the resulting nanocomp osite structures are presented. (C) 2000 Elsevier Science S.A. All rights r eserved.