Photoluminescence of Er-implanted silica, polysiloxane and porous silicon films

The photoluminescence of erbium is studied in Er-implanted films of the SR3 50 polysiloxane, porous silicon and silica. A strong emission at 1.53 mu m is observed already at room temperature, increasing more quickly with the a nnealing temperature in porous silicon and SR350 than in silica. Little the rmal quenching is measured between 6 and 300 K. According to the peak shape s, intensities and quenching factors, the active sites are the same in the three types of films. Changes in their concentration with the annealing tem perature seems to indicate that Er migrates from Si clusters in porous sili con and from the C ones in SR350 (formed during the conversion of the polym er in a composite ceramics by the irradiation) into the surrounding oxide. (C) 2000 Elsevier Science S.A. All rights reserved.