Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2

We have investigated the electrical transport and luminescence of Si dots e mbedded in SiO2. The dots have been obtained by high temperature annealing of silicon rich oxides prepared by chemical vapor deposition. Transmission electron microscopy analysis demonstrates the presence of crystalline Si do ts with grain radii down to 1 nm. The data of luminescence and electrical t ransport appear correlated with the dot size distribution. Moreover, the an alysis of the electrical characteristics of metal-oxide-semiconductor capac itors with silicon rich oxide films indicates that such systems may reversi bly store charge, thus exhibiting the function of a memory. (C) 2000 Elsevi er Science S.A. All rights reserved.