Laser-induced nanocrystalline silicon formation in a-SiO matrices

Authors
Rossi, MC Salvatori, S Galluzzi, F Conte, G
Citation
Mc. Rossi et al., Laser-induced nanocrystalline silicon formation in a-SiO matrices, MAT SCI E B, 69, 2000, pp. 299-302
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
69
Year of publication
2000
Pages
299 - 302
Database
ISI
SICI code
0921-5107(20000119)69:<299:LNSFIA>2.0.ZU;2-F
Abstract
Nanocrystalline silicon formation by CW laser-irradiation of amorphous sili con-oxygen alloys of variable composition has been investigated as a functi on of both laser power density and alloy composition. Structural changes du ring the annealing treatment were monitored 'in situ' by micro Raman spectr oscopy. Careful Raman lineshape analysis in the 450-550 cm(-1) range allowe d the evaluation of Si nanocrystal size distribution. It is shown that depe nding on the size of the nanocrystallites, irradiation can yield to a stron g photoluminescence (PL) enhancement or quenching. (C) 2000 Elsevier Scienc e S.A. All rights reserved.