Magneto-photoluminescence study of energy levels of self-organised InAs/GaAs quantum dots

Citation
J. Oswald et al., Magneto-photoluminescence study of energy levels of self-organised InAs/GaAs quantum dots, MAT SCI E B, 69, 2000, pp. 318-323
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
69
Year of publication
2000
Pages
318 - 323
Database
ISI
SICI code
0921-5107(20000119)69:<318:MSOELO>2.0.ZU;2-M
Abstract
Magneto-photoluminescence (MPL) of self-organised MOCVD epitaxially grown I nAs dots embedded in GaAs has been investigated in order to identify the na ture of the corresponding optical transitions and to determine the effectiv e mass of confined electrons and holes. MPL was studied in the range of 0-2 8 T in Faraday and Voigt configurations. At zero field we have observed up to three PL peaks corresponding to a ground state transition ( similar to 1 eV) and two excited state transitions ( similar to 1.1 and similar to 1.2 eV). The ground state transition showed a small diamagnetic shift. the firs t excited transition was split into two components and three split componen ts were observed for the second excited transition as a function of magneti c field ill the Faraday configuration. A simple one-particle Fock-Darwin mo del of two-dimensional electrons confined in a parabolic well seems to desc ribe the PL behaviour in magnetic field. (C) 2000 Elsevier Science S.A. All rights reserved.