Lateral ordering of Ge islands along [100] directions is observed when the
growth is performed on Si mesas with crystallographic planes of the (100) z
one. The islands nucleate in single one-dimensional rows along the intersec
tion line between {01h} facets with a {011} plane. The high index planes we
re generated by using selective epitaxial growth of Si for the formation of
faceted mesas. On these mesas Ge was deposited at 700 degrees C with a low
growth rate (0.04 ML s(-1)) so as to achieve on large areas a monomodal is
land distribution (medium sized islands known as dome clusters). However. o
n the (001) part of the Si mesas one observes a transition from monomodal t
o bimodal distribution. On small areas (small total coverage) only ordered
islands of medium size along the edges are present. On larger mesas (higher
total coverage) beside the ordered rows with medium size islands also smal
l sized islands (30 nm diameter, 1 nm height, density 8 x 10(9) cm(-2)) nuc
leate on the (001) plane. At even higher coverage medium sized islands are
also created on the (001) plane. The higher nucleation probability of islan
ds on the high index planes must be due to a lower energy barrier for nucle
ation on these planes. The ordering on mesas (even as large as 200 x 200 mu
m(2)) must be related with a high surface diffusion length, lambda(Ge) for
the Ge atoms on the strained wetting (001) layer. From lambda(Ge) similar
to 100 mu m an activation energy for Ge migrating on strained Ge (001) E-s
similar to 0.65 eV could be evaluated. (C) 2000 Elsevier Science S.A. All r
ights reserved.