Microcrystalline silicon thin film transistors obtained by hot-wire CVD

Authors
Puigdollers, J Dosev, D Orpella, A Vox, C Peiro, D Bertomeu, J Marsal, LF Pallares, J Andreu, J Alcubilla, R
Citation
J. Puigdollers et al., Microcrystalline silicon thin film transistors obtained by hot-wire CVD, MAT SCI E B, 69, 2000, pp. 526-529
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
69
Year of publication
2000
Pages
526 - 529
Database
ISI
SICI code
0921-5107(20000119)69:<526:MSTFTO>2.0.ZU;2-3
Abstract
Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilic on thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD. Some results concerned with the structural charac terization of the material and electrical performance of the device are pre sented. (C) 2000 Elsevier Science S.A. All rights reserved.