The growth mechanisms of microcrystalline silicon thin films at low tempera
tures (100-250 degrees C) by plasma CVD are still a matter of debate. We ha
ve shown that mu c-Si:H formation proceeds through four phases (incubation,
nucleation, growth and steady state) and that hydrogen plays a key role in
this process, particularly during the incubation phase in which hydrogen m
odifies the amorphous silicon network and forms a highly porous phase where
nucleation takes place. In this study we combine in-situ ellipsometry and
dark conductivity measurements with ex-situ high resolution transmission el
ectron microscopy to improve our understanding of microcrystalline silicon
formation. (C) 2000 Elsevier Science S.A. All rights reserved.