Depth profiles of MeV C+ and C-2(+) ions implanted in III-V semiconductors

A study has been made to investigate the depth profiles of MeV C atoms impl anted in a few common III-V semiconducting targets. Single crystal substrat es of GaP, GaAs, GaSb, InP and InSb were used in the present study. They we re implanted with C+ and C-2(+) ions at implantation energies of 1.00 and 2 .00 MeV respectively, and a dose of 5 x 10(14) C-atoms cm(-2). The projecte d range and longitudinal straggling of the implanted C atoms have been meas ured by the secondary ion mass spectroscopy (SIMS) technique and compared w ith the theoretical predictions. The measured range parameters of C+ ions a gree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C-2(+) implantations. In this case the measured R-p values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is prese nted. (C) 2000 Elsevier Science S.A. All rights reserved.