Investigation of RF-sputtered Fe-Ta-N thin films

Citation
Fl. Wei et al., Investigation of RF-sputtered Fe-Ta-N thin films, MAT SCI E B, 68(3), 2000, pp. 156-160
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
68
Issue
3
Year of publication
2000
Pages
156 - 160
Database
ISI
SICI code
0921-5107(20000103)68:3<156:IORFTF>2.0.ZU;2-5
Abstract
The nanocrystallite Fe-Ta-N thin films with high Ta content were prepared b y RF reactive sputtering. The dependence of structure and magnetic properti es on nitrogen partial pressure P(N-2) and annealing temperature T-an were investigated by XRD, TEM and VSM. It is found that the deposited films in t he mixture gas of Ar + N-2 consist of amorphous, after annealing nanocrysta llite of alpha-Fe crystallized from the amorphous. The films are deposited in low nitrogen partial pressure show excellent soft magnetism. It means th at controlled crystallization of amorphous is an effective method to prepar e nanocrystallite soft magnetic alloy thin films. (C) 2000 Elsevier Science S.A. All rights reserved.