Epitaxial Si1-xGex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition

Authors
Nakahata, T Sugihara, K Furukawa, T Yamakawa, S Maruno, S Tokuda, Y Yamamoto, K Inagaki, T Kiyama, H
Citation
T. Nakahata et al., Epitaxial Si1-xGex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition, MAT SCI E B, 68(3), 2000, pp. 171-174
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
68
Issue
3
Year of publication
2000
Pages
171 - 174
Database
ISI
SICI code
0921-5107(20000103)68:3<171:ESGIFC>2.0.ZU;2-L
Abstract
An ultrahigh-vacuum chemical vapor deposition technique with disilane (Si2H 6) and germane (GeH4) molecular flux is applied to Si1-xGex (x = 0-0.15) se lective growth into fine contact holes. The growth behavior of epitaxial Si 1-xGex layer is influenced by addition of GeH4 with Si2H6 flow rate kept at constant, which is interpreted by estimation of facet growth rates. The gr owth rates of (311) and (111) facets are drastically decreased by addition of a small amount of GeH4. As a result, in the fine holes, the epitaxial la yer height of Si1-xGex is limited by the (311) growth rate and decreased co mpared with pure Si. (C) 2000 Elsevier Science S.A. All rights reserved.