The rate of the resistance degradation was decreased with the increase of t
he Er content in the films. The increase in the leakage current density at
100 degrees C for the Er-0.186-mol%-doped SrTiO3 thin film was less than on
e order of magnitude even after 1000 h, while that for undoped SrTiO3 thin
films, it was by about one order of magnitude after 10 h. The Er-doped STO
thin film also showed high stability of the interface between the films and
the Pt electrodes against heat treatment in Nz.