Electron-phonon interaction in disordered conductors: Static and vibratingscattering potentials

Employing the Keldysh diagram technique, we calculate the electron-phonon e nergy relaxation rate in a conductor with the vibrating and static delta-co rrelated random electron-scattering potentials. If the scattering potential is completely;dragged by phonons, this model yields the Schmid's result fo r:the inelastic electron-scattering rate tau(e-ph)(-1). At low temperatures the effective interaction decreases due to disorder, and tau(e-ph)(-1)prop ortional to T(4)l (l is the electron mean-free path), In the presense of th e static potential, quantum interference of numerous scattering processes d rastically changes the effective electron-phonon interaction. In particular , at low temperatures the interaction increases, and tau(e-ph)(-1)proportio nal to T-2/l. Along with an enhancement of the interaction, which is observ ed in disordered metallic films and semiconducting structures at low temper atures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular fil m.