Coexistence of weak localization and a metallic phase in Si/SiGe quantum wells

Authors
Senz, V Heinzel, T Ihn, T Ensslin, K Dehlinger, G Grutzmacher, D Gennser, U
Citation
V. Senz et al., Coexistence of weak localization and a metallic phase in Si/SiGe quantum wells, PHYS REV B, 61(8), 2000, pp. R5082-R5085
Citations number
65
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
8
Year of publication
2000
Pages
R5082 - R5085
Database
ISI
SICI code
1098-0121(20000215)61:8<R5082:COWLAA>2.0.ZU;2-I
Abstract
Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metal lic regime, pronounced weak localization reduces the metallic behavior arou nd zero magnetic field without destroying it. In the insulating phase, a po sitive magnetoresistivity emerges close to B=0, possibly related to spin-or bit interactions.