Capacitance-voltage profile in a structure with negative differential capacitance caused by the presence of InAs/GaAs self-assembled quantum dots

The application of the usual expressions to calculate the capacitance-volta ge (CV) profiles in samples with quantum dots gives erroneous results, main ly due to the presence of the characteristic negative differential capacita nce of a system with dimensionality lower than.-We developed a simple elect rostatic model to calculate the CV profiles in these systems, and we applie d it to a sample with an InAs self-assembled quantum dots system in order t o obtain informations about the structure of the bets. As a result, the loc al distribution of electrons in the quantum dots (CV profile) was obtained.