Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAs

Authors
Mankefors, S Nilsson, PO Kanski, J Andersson, T Karlsson, K Agui, A Sathe, C Guo, JH Nordgren, J
Citation
S. Mankefors et al., Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAs, PHYS REV B, 61(8), 2000, pp. 5540-5545
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
8
Year of publication
2000
Pages
5540 - 5545
Database
ISI
SICI code
1098-0121(20000215)61:8<5540:TIOTTD>2.0.ZU;2-7
Abstract
Ultrathin AlAs(100) layers of 1-, 2-, and 5-ML thickness buried in GaAs are investigated by nb initio calculations. Unique experimental soft-x-ray emi ssion spectra are explained in terms of interface effects and changes with layer thickness are found in the density of states. Only the central layer in the 5-ML geometry is bulklike. A valence-band offset of 0.53 eV is also found for this structure, while no offset exists in the 1- and 2-ML cases. Very good agreement is achieved between theory and experiment.