Influence of doping on sensitivity and response time of TiO2 oxygen gas sensor

Citation
Rk. Sharma et al., Influence of doping on sensitivity and response time of TiO2 oxygen gas sensor, REV SCI INS, 71(3), 2000, pp. 1500-1504
Citations number
26
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
REVIEW OF SCIENTIFIC INSTRUMENTS
ISSN journal
00346748 → ACNP
Volume
71
Issue
3
Year of publication
2000
Pages
1500 - 1504
Database
ISI
SICI code
0034-6748(200003)71:3<1500:IODOSA>2.0.ZU;2-M
Abstract
The recent trend in gas sensor research is to achieve higher gas sensitivit y and shorter response time at low operating temperatures. In the present s tudy, titanium dioxide was studied as an oxygen gas sensor at different chr omium (Cr) dopant concentrations. The sensitivity and response time measure ments were carried out as a function of operating temperature and oxygen pa rtial pressure. A higher sensitivity and shorter response time was observed at 700 degrees C in 0.40 wt % Cr doped sensor as compared to an undoped se nsor, which showed higher sensitivity at 800 degrees C. The 0.40 wt % Cr do ped sensor shows 13 times higher sensitivity as compared to undoped sensor. The porosity of the material decreases as Cr concentration increases. A la rge number of operation cycles were performed on the sensor, which shows th e stability of the device over long period. The sensitivity and response ti me of the sensor were also correlated with electronic structure results obt ained from x-ray photoelectron spectroscopy. (C) 2000 American Institute of Physics. [S0034-6748(00)00302-6].